Mitsubishi Electric releases discrete SiC-SBD device
Mitsubishi Electric has released their first discrete SiC-SBD (Silicon Carbide Schottky Barrier Diode) devices on 1 March. SiC-SBD and SiC-MOSFET…
SiC
DISCO Corporation announces laser slicing technology for high-speed SiC wafer production
DISCO Corporation has announced it has developed an ingot laser slicing method called "KABRA" (Key Amorphous-Black Repetitive Absorption) for SiC…