Mitsubishi Electric has released their first discrete SiC-SBD (Silicon Carbide Schottky Barrier Diode) devices on 1 March. SiC-SBD and SiC-MOSFET has been used in Mitsubishi Electric’s power modules before, but this is their first discrete parts. They are available in two packages: TO-220 with model number BD20060T and TO-247 with model number BD20060S. Both models […]
DISCO Corporation has announced it has developed an ingot laser slicing method called “KABRA” (Key Amorphous-Black Repetitive Absorption) for SiC wafer which enables high-speed wafer production with reduced material loss. Compared with existing diamond wire saw process, the total processing time per ingot reduces from 2.5-3.5 days to 18 hours. Also, the number of wafers […]