Mitsubishi Electric has released their first discrete SiC-SBD (Silicon Carbide Schottky Barrier Diode) devices on 1 March. SiC-SBD and SiC-MOSFET has been used in Mitsubishi Electric’s power modules before, but this is their first discrete parts. They are available in two packages: TO-220 with model number BD20060T and TO-247 with model number BD20060S. Both models […]
